References | 1. Indutnyi, I.Z, Kostyshin, M.T., Kasiarum, O.P., et al. (1992). Photo-Induced Interactions in the Metal-Semiconductor Structures. Kyiv: Naukova Dumka (in Russian).
2. Vlcek, M., Frumar, M., Kubovy, M., and Nevsimalova, V.: The Influence of the Composition of the Layers and of the Inorganic Solvents on Photo-Induced Dissolution of As-S Amorphous Thin Films. J. Non-Cryst. Solids, 137/138, 1035—1038 (1991).
https://doi.org/10.1016/S0022-3093(05)80298-4
3. Indutnyi, I.Z, Kostioukevich, S.A., and Shepeliavyi, P.E.: Patent 2008285 of the Russian Federation, MKI5 S 03 S 15/00, 23/00. Solution for Negative Etching of Chal cogenide Glasses. Discoveries, Inventions, 4, (1994) (in Russian).
4. Indutnyi, I.Z., Stronski, A.V., Romanenko, P.F. et al.: Manufacturing of Holographic Optical Elements with the Help of Chalcogenide Resists. Proc. SPIE, 2321, 352—354 (1994).
https://doi.org/10.1117/12.182007
5. Indutnyi, I.Z., Stronski, A.V., Kostioukevich, S.A. et al.: Holographic Optical Element Fabrication Using Chalcogenide Layers. Optical Engineering, 34, 4, 1030—1039 (1995).
https://doi.org/10.1117/12.197144
6. Minko, V.I., Shepeliavyi, P.E., Danko, V.A. et al.: Recording of High Efficiency Diffraction Gratings by He-Ne Laser. Semiconductor Physics, Quantum Electronics & Optoelectronics, 7, 1, 88—92 (2004).
7. Indutnyy, I., Popescu, M., Lorinczi, A. Shepeliavyi, P. et al.: Interference Lithography Using Chalcogenide Inorganic Photoresist. J. of Optoelectronics and Advanced Materials, 10, 12, 3188—3192 (2008).
8. Danko, V.A., Indutnyi, I.Z., Minko, V.I. et al.: The Use of Two-Layer Chalcogenide Photoresist for Interferential Photo-Lithograthy. Optoelectronic and Semiconductor Devices, 44, 68—73 (2009).
9. Minko, V.I., Shepeliavyi, P.E., and Indutnyi, I.Z.: Patent of Ukraine 87393, MPK7G03H1/26; G03G5/082; G03F7/00. Method for Recording of Relief-Phase Periodical Structure. Industrial Property Bulletin, 13 (2009) (in Ukrainian).
10. Danko, V.A., Indutnyi, I.Z., Minko, V.I., and Shepeliavyi, P.E.: Interference Photolithography Using Resists Ba sed on Chalcogenide Glassy Semiconductors. Autometering, 46, 5, 103—112 (2010).
11. Danko, V., Indutnyi, I., Minko, V. et al.: Interference Photolithography Using Photo-Etching Effect in Chalcogenide Films. Journal of Non-Oxide Glasses, 3, 2, 13—18 (2012).
12. Danko, V.A., Indutnyi, I.Z., Minko, V.I., and Shepeliavyi, P.E.: Patent of Ukraine 99226 UA, of 25.07.2012, MPK (2012.01) G03H 1/00, G03F 7/00 G03G 5/00. Method for Forming the Lithographic Masks and Relief-Phase Periodical Structures on the Chalcogenide Photoresist Layers. Bulletin, 14, (2012) (in Ukrainian).
13. Indutnyi, I.Z., Minko, V.I., and Shepeliavyi, P.E. et al.: High-Voltage Photoresist Based on Reverse Photo-Structural Transformations in Chalcogenides. Proceedings of 6th Ukrainian Conference on Physics of Semiconductors, September, 23—27, 2013, 498—499 (2013) (in Ukrai ni an).
14. Turianitsa, I.I., Pinzenik, K.I., and Frolova, N.P.: Inorganic Photoresist Based on Glassy Semiconductor Chalcogenide Layers. Semiconductor Materials and Optoelectronic Devices Based on Them, 69—74 (1991) (in Russian).
15. Frolova, N.P. and Turianitsa, I.I.: Selective Etching of As-Se Resist Layers. Proceedings of the 5th Ukrainian Conference Physics and Techniques of Thin Films of Complex Semiconductors, 161—162 (1992) (in Ukrainian).
16. Liubin, V.M., Sedykh, A.M., Smirnova, N.N., and Shylo, V.P.: Inorganic Photoresists Based on Chalcogenide Glassy Semiconductors. Microelectronics, 18, 6, 523—526 (1989) (in Russian).
17. Zenkin, S.A., Kirianov, K.V., Lobanov, A.B. et al.: Mechanism of Changing Rate of Dissolution of As2S3 Films Under Photo-Structural Transformations. Proceedings of Conference on Non-Crystalline Semiconductors, 2, 186—188 (1989) (in Russian).
|